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Oct 14 – 16, 2019
IJCLab
Europe/Paris timezone

Modeling of AlGaN/GaN High-electron-mobility transistor using gate field-plate technology for high-frequency applications

Oct 15, 2019, 6:15 PM
1h 40m

Speaker

Mourad Kaddeche (Département de Technologie, Faculté des Sciences et de la Technologie, Université de Djilali Bounaâma- Khemis miliana, Ain Defla, 44225 Algeria)

Presentation materials

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