Orateur
Description
The field-effect transistor is the basis technology of semiconduc-
tor nanoscale devices1. It was believed that a field-effect transistor
(FET) is impossible in superconductors due to the high charge den-
sity and since the electric field decays exponentially from the surface.
In recent papers show that superconductivity in various systems can
be suppressed by the application of gate voltages. In order to de-
scribe the phenomenon that leads to the critical current suppres-
sion in metallic superconducting structures, a field-effect hypothesis
has been formulated, stating that an electric field can penetrate the
metallic superconductor. The existence of such an effect would imply
the incompleteness of the underlying theory, and hence indicate an
important gap in the general comprehension of superconductors.
In this paper, we study symmetric full suppression of critical cur-
rent for very low applied critical gate voltages VG ± 0.6 V. in bal-
listic superconductor-topological insulator-superconductor (S/TI/S)
Josephson junctions. Our analysis demonstrated that this effect is
caused by injection of quasiparticles into a device. To prove our hy-
pothesis, we have reproduced the most distinctive features of previ-
ous experiments using titanium and niobium Diem bridges. We also
investigated several types of silicon in our experiments. Importantly,
we do not claim this work to nullify the results of previous works.
| Affiliation de l'auteur principal | ESPCI École supérieure de physique et de chimie industrielles de la Ville de Paris |
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